Investigation on stress induced hump phenomenon in IGZO thin film transistors under negative bias stress and illumination
نویسندگان
چکیده
منابع مشابه
Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors
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The effect of the active layer thickness (TIGZO) on the negative bias illumanation stress (NBIS)-induced threshold voltage shift (∆VT) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states-based simulator (DeAOTS). The NBIS-induced ∆VT in a-IGZO TFT with a thinner TIGZO is negatively larger than that in a-IGZO TFTs with a th...
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 55 شماره
صفحات -
تاریخ انتشار 2015